Two aspects of the Mott-Hubbard transition in Cr-doped V2O3

摘要

The combination of bandstructure theory in the local density approximation with dynamical mean-field theory was recently successfully applied to V2O3-a material which undergoes the famous Mott-Hubbard metal-insulator transition upon Cr doping. The aim of this short paper is to emphasize two aspects of our recent results: (i) the filling of the Mott-Hubbard gap with increasing temperature, and (ii) the peculiarities of the Mott-Hubbard transition in this system which is not characterized by a divergence of the effective mass for the a(1g)-orbital. (c) 2005 Elsevier B.V. All rights reserved.