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Residual resistivity of n-d impurities diluted in noble hosts

机译:稀有主体中稀释的n-d杂质的残留电阻率

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摘要

We discuss the temperature-independent resistivity of nd (n = 3,4) transition metal impurities diluted in Cu host, using a T-matrix formulation in a single band system. We take into account the translational symmetry breaking introduced by the impurity and therefore a non-local charge potential is obtained. The effect of volume difference between impurity and host elements is also considered in the calculation. Our numerical results describe quite well the available experimental data. (C) 2004 Elsevier B.V. All rights reserved.
机译:我们讨论了在单谱带系统中使用T矩阵配方稀释在Cu主体中稀释的nd(n = 3,4)过渡金属杂质的与温度无关的电阻率。我们考虑到杂质引入的平移对称性破坏,因此获得了非局部电荷势。计算中还考虑了杂质与主体元素之间的体积差异的影响。我们的数值结果很好地描述了可用的实验数据。 (C)2004 Elsevier B.V.保留所有权利。

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