...
首页> 外文期刊>Physica, B. Condensed Matter >Theoretical descriptions of the flow resistivity of very thin He-4 films near the Kosterlitz-Thouless transition
【24h】

Theoretical descriptions of the flow resistivity of very thin He-4 films near the Kosterlitz-Thouless transition

机译:关于Kosterlitz-Thouless跃迁附近非常薄的He-4薄膜的流动电阻率的理论描述

获取原文
获取原文并翻译 | 示例

摘要

Massflow in superfluid He-4 films of only a few atomic layers thickness experiences flow resistance due to the dissipative motion of free vortices. Below the transition temperature these free vortices are generated by the flow through the breaking up of bound pairs, above the transition additional dissociation of pairs occurs spontaneously by thermal activation. In this paper a survey is presented of the present theoretical descriptions of the flow resistivity of very thin He-4 films. The assignation of the various film parameters, as they appear in the theory, to a film of given thickness at a given temperature is briefly discussed. In the subsequent paper the theories are applied to series of flow measurements on films on various substrates. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 70]
机译:由于自由涡流的耗散运动,只有几原子层厚度的超流体He-4膜中的质量流会遇到流动阻力。在转变温度以下,这些自由涡流是通过流经结合对的分解而产生的,在转变温度以上,通过热激活自发发生了对的额外解离。在本文中,对目前非常薄的He-4薄膜的流动电阻率的理论描述进行了调查。简要讨论了在理论中出现的各种薄膜参数在给定温度下给定厚度的薄膜的分配。在随后的论文中,这些理论被应用于在各种基板上的薄膜上的一系列流量测量。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:70]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号