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On the nature of the Fractional Quantum Hall Effect ground state at low fillings

机译:低填充下分数量子霍尔效应基态的性质

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We propose that the fractional quantum Hall effect structures recently observed in a narrow low temperature window below filling 115 correspond to a charge density wave exhibiting a depinning transition and further gap blurring as the temperature is increased. The main qualitative difference between the usual Wigner crystal and this charge density wave state is that while the former is featureless as the filling of the first Landau level changes, the latter exhibits cusps in the energy at odd fillings, as required by the odd-denominator rule that characterizes the effect, thus making possible the quantum Hall features. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译:我们提出,最近在填充物115下方的狭窄的低温窗口中观察到的分数量子霍尔效应结构对应于电荷密度波,该电荷密度波表现出脱钉转变,并且随着温度升高,间隙进一步模糊。通常的维格纳晶体和这种电荷密度波状态之间的主要质量差异是,尽管前者随着第一朗道能级的填充变化而没有变化,但后者却表现出奇填充处能量的尖峰,这是奇分母所要求的。表征该效应的规则,从而使量子霍尔特征成为可能。 (C)2004 WILEY-VCH Verlag GmbH&Co. KGaA,Weinheim。

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