Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure

摘要

In this paper, we calculate the spin-dependent ballistic transport through a two-dimensional electron gas (2DEG) heterostructure sandwiched between two ferromagnetic metal (FM) layers. A strong spin-injection effect is predicted when the magnetization directions of two FM layers are antiparallel. The spin-injection rate can be tuned by both, applied voltage and magnetic field. The device also exhibits a significant magnetoconductance (MC) when the relative magnetization of FM layers is switched, which functions as a spin-valve (SV). Using a GaAs system as a 2DEG material in our calculation, the MC can be tuned by both the applied voltage and the magnetic field, and reaches up to as high as 37.5%. The device's dual spin-valve and spin-injector characteristics open the possibility for spin electronic and sensor applications in semiconductor based systems. [References: 10]