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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Electron induced collisional population decay rates for levels of 3p(5)4s and 3P(5)4p manifolds of ArI in plasma
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Electron induced collisional population decay rates for levels of 3p(5)4s and 3P(5)4p manifolds of ArI in plasma

机译:等离子体中ArI的3p(5)4s和3P(5)4p歧管水平的电子诱导的碰撞种群衰减率

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摘要

Population decay rates due to collisions with electrons were calculated for levels belonging to 4s and 4p manifolds of ArI, for the electron temperature range from 7000 K to 21000 K. These quantities are necessary to describe the signal received from the laser spectroscopy of argon plasmas as well as in plasma modelling. Discussion on the available theoretical and experimental data concerning cross sections required for calculation is presented. Consistency of the cross section data set was verified by comparing the measured Stark width and its temperature dependence for the 696.5 nm ArI line to the inelastic collisions contribution to this line width derived from calculated population decay rates. [References: 28]
机译:对于电子温度范围为7000 K至21000 K,计算了属于ArI的4s和4p流形的能级,计算了由于与电子的碰撞而引起的总体衰减率。这些量对于描述从氩等离子体的激光光谱接收的信号是必需的,如下所示:以及在血浆建模中。讨论了有关计算所需横截面的可用理论和实验数据。通过比较测得的Stark宽度及其对696.5 nm ArI线的温度依赖性与从计算的种群衰减率得出的对该线宽度的非弹性碰撞贡献,来验证横截面数据集的一致性。 [参考:28]

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