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Modification of alkanethiolate monolayers on Au-substrate by low energy electron irradiation: Alkyl chains and the S/Au interface

机译:通过低能电子辐照修饰Au基底上的链烷硫醇单分子膜:烷基链和S / Au界面

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摘要

Low-energy electron irradiation damage in alkanethiol (AT) self-assembled monolayers (SAM) has been studied by using hexadecanethiolate [HDT: CH_3-(CH_2)_(15)-S~-] film on Au-substrate as a model system. The induced changes were monitored by in situ photoelectron spectroscopy and angle resolved near edge X-ray absorption fine structure spectroscopy. AT SAMs are found to be very sensitive to low-energy electron irradiation. Both the alkyl chains and the S/Au interface are affected simultaneously through the electron-induced dissociation of C-H, C-C, C-S, and Au-thiolate bonds. The most noticeable processes are the loss of the orientational and conformational order, partial dehydrogenation and desorption of the film, and the appearance of new sulfur species. The latter process can be related to the formation of disulfide at the S/Au interface or an incorporation of the thiolate (or the corresponding radical) into the alkyl matrix via bonding to irradiation-induced carbon radicals in the adjacent aliphatic chains. The most essential damage in the AT films occurs in the early stages of irradiation. Irradiation with a dose of 1000 #mu#C cm~(-2) (about 13 electrons per HDT chain) at the primary electron energy of 50 eV results in almost complete breakdown of the orientational order in the initially well-ordered HDT film, a decrease of its thickness by about 25%, and a destruction of approx= 40% of the original Au-thiolate bonds. The film becomes a disordered structure comprising both saturated and unsaturated hydrocarbons. Further irradiation of the residual film is accompanied by a continuous C-C bond cleavage and the desorption of the remaining hydrogen, which merely leads to increasing cross-linking and the transformation of saturated hydrocarbons into unsaturated ones through C=C double bond formation.
机译:以十六烷基硫醇盐[HDT:CH_3-(CH_2)_(15)-S〜-]薄膜为模型系统,研究了烷硫醇(AT)自组装单分子膜(SAM)中的低能电子辐照损伤。 。通过原位光电子能谱监测诱导的变化,并在边缘X射线吸收精细结构能谱附近分辨角度。发现AT SAM对低能电子辐射非常敏感。烷基链和S / Au界面同时受到电子诱导的C-H,C-C,C-S和金硫醇键解离的影响。最显着的过程是失去取向和构象顺序,薄膜部分脱氢和解吸以及出现新的硫物质。后一过程可能与在S / Au界面上形成二硫键或通过结合到相邻脂族链中的辐射诱导的碳自由基而将硫醇盐(或相应的自由基)掺入烷基基质有关。 AT膜中最本质的损坏发生在辐射的早期阶段。在初始电子能量为50 eV的条件下,以1000#mu#C cm〜(-2)的剂量(每条HDT链约13个电子)进行辐照会导致最初有序的HDT薄膜几乎完全破坏取向方向,其厚度减少约25%,原始金-硫醇盐键的破坏程度约为40%。膜变成包含饱和和不饱和烃的无序结构。残留膜的进一步辐射伴随有连续的C-C键断裂和剩余氢的解吸,这仅导致交联增加,饱和烃通过C = C双键形成转化为不饱和烃。

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