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Molecular dynamics interpretation of structural changes in quartz

机译:分子动力学解释石英的结构变化

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Constant temperature and constant pressure molecular dynamics (MD) simulations were applied to quartz to calculate the structural details which are indeterminable in usual X-ray structure studies. The dynamics of the structural changes was analyzed by means of time-dependent atomic displacement parameters. The Si-O bonds expand with increasing temperatures through the α- and β-phases, and atoms vibrate around the α_1-(or α_2-) sites at lower temperatures in the α-phase, and over the energy barriers between the α_1- and the α_2-sites at higher temperatures in the α- and the β-phases. The ratios of time lengths spent by atoms in the α_1- and α_2-sites determine the apparent atomic positions as obtained in usual structure studies of α-quartz. More frequent transfer of atoms over the α_1- and the α_2-sites contributes positively to the thermal expansions, whereas larger amplitudes of vibrations, which carry atoms more distantly and more frequently from the β-sites, contribute negatively. The well-known steep thermal expansion in the α-phase is attributed to the additive contribution from the expansions of the Si-O bond lengths, the widening of Si-O-Si angles, and the increase of the atomic transfer-frequency between the α_1- and the α_2-sites. The nearly zero or negative expansion in the β-phase is caused by balancing the negative to the positive effects. The MD crystal transforms to the β-phase via a transitional state, where the α- and β-structures appear alternately with time, or coexist. The slight and continuous expansions observed right after the steep rise(s) of the volume or cell dimensions up to the nearly horizontal curve(s) are attributed to the continuous changes within the transitional state.
机译:将恒温和恒压分子动力学(MD)模拟应用于石英,以计算通常X射线结构研究无法确定的结构细节。通过随时间变化的原子位移参数分析了结构变化的动力学。 Si-O键随着温度的升高而通过α-相和β-相扩展,并且原子在较低的温度下在α相中的α_1-(或α_2-)位点周围振动,并在α_1-和β之间的能垒上方振动。 α相和β相中温度较高的α_2位点。原子在α_1和α_2位置所花费的时间长度比率决定了在通常的α石英结构研究中获得的表观原子位置。原子在α_1-和α_2-位点上更频繁的转移对热膨胀有积极的贡献,而更大的振动幅度(对原子更远离和更远离β-位点的携带)起负作用。众所周知,α相中陡峭的热膨胀归因于Si-O键长的扩展,Si-O-Si角的变宽以及原子之间的原子转移频率的增加。 α_1-和α_2-位点。 β相中的几乎零膨胀或负膨胀是通过平衡负效应与正效应引起的。 MD晶体通过过渡态转变为β相,其中α和β结构随时间交替出现或共存。在体积或单元格尺寸急剧上升直至接近水平曲线之前,观察到的轻微且连续的膨胀归因于过渡状态内的连续变化。

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