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首页> 外文期刊>Photosynthesis Research: An International Journal >Very high light resistant mutants of Chlamydomonas reinhardtii: Responses of Photosystem II, nonphotochemical quenching and xanthophyll pigments to light and CO2
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Very high light resistant mutants of Chlamydomonas reinhardtii: Responses of Photosystem II, nonphotochemical quenching and xanthophyll pigments to light and CO2

机译:莱茵衣藻的极高耐光突变体:光系统II,非光化学猝灭和叶黄素色素对光和CO2的响应

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摘要

We have isolated very high light resistant nuclear mutants (VHLR) in Chlamydomonas reinhardtii, that grow in 1500-2000 mu mol photons m(-2) s(-1) (VHL) lethal to wildtype. Four nonallellc mutants have been characterized in terms of Photosystem II (PS II) function, nonphotochemical quenching (NPQ) and xanthophyll pigments in relation to acclimation and survival under light stress. In one class of VHLR mutants isolated from wild type (S4 and S9), VHL resistance was accompanied by slower PS II electron transfer, reduced connectivity between PS II centers and decreased PS II efficiency. These lesions in PS II function were already present in the herbicide resistant D1 mutant A251L (L*) from which another class of VHLR mutants (L4 and L30) were isolated, confirming that optimal PS II function was not critical for survival in very high light. Survival of all four VHLR mutants was independent of CO2 availability, whereas photoprotective processes were not. The de-epoxidation state (DPS) of the xanthophyll cycle pigments in high light (HL, 600 mu mol photons m(-2) s(-1)) was strongly depressed when all genotypes were grown in 5% CO2. In S4 and S9 grown in air under HL and VHL, high DPS was well correlated with high NPQ. However when the same genotypes were grown in 5% CO2, high DPS did not result in high NPQ, probably because high photosynthetic rates decreased thylakoid Delta pH. Although high NPQ lowered the reduction state of PS II in air compared to 5% CO2 at HL in wildtype, S4 and S9, this did not occur during growth of S4 and S9 in VHL. L* and VHLR mutants L4 and L30, also showed high DPS with low NPQ when grown air or 5% CO2, possibly because they were unable to maintain sufficiently high Delta pH due to constitutively impaired PS II electron transport. Although dissipation of excess photon energy through NPQ may contribute to VHL resistance, there is little evidence that the different genes conferring the VHLR phenotype affect this form of photoprotection. Rather, the decline of chlorophyll per biomass in all VHLR mutants grown under VHL suggests these genes may be involved in regulating antenna components and photosystem stoichiometries.
机译:我们在衣藻中分离到了非常高的抗光核突变体(VHLR),该突变体在1500-2000μmol光子m(-2)s(-1)(VHL)中生长,对野生型具有致命性。根据光系统II(PS II)功能,非光化学猝灭(NPQ)和叶黄素色素的特性,已在光应力下适应和存活了四个非等位基因突变体。从野生型(S4和S9)分离出的一类VHLR突变体中,VHL抗性伴随着PS II电子转移速度降低,PS II中心之间的连通性降低以及PS II效率降低。 PS II功能中的这些损害已经存在于抗除草剂的D1突变体A251L(L *)中,从中分离出另一类VHLR突变体(L4和L30),这证实了最佳PS II功能对于在高光下的存活不是至关重要的。所有四个VHLR突变体的存活都与CO2的利用无关,而光保护过程则并非如此。当所有基因型均在5%CO2中生长时,强烈抑制了叶黄素循环色素在高光(HL,600μmol光子m(-2)s(-1))中的脱环氧化状态(DPS)。在HL和VHL下在空气中生长的S4和S9中,高DPS与高NPQ密切相关。但是,当相同的基因型在5%的CO2中生长时,高DPS不会导致高NPQ,这可能是因为高光合速率降低了类囊体Delta pH。尽管与野生型,S4和S9的HL的5%CO2相比,高NPQ降低了空气中PS II的还原状态,但这在VHL的S4和S9的生长过程中没有发生。 L *和VHLR突变体L4和L30在空气中生长或在5%CO2中也显示出高DPS和低NPQ,这可能是因为它们由于PS II电子传递的组成性损害而无法维持足够高的Delta pH。尽管通过NPQ耗散多余的光子能量可能有助于VHL抵抗,但几乎没有证据表明赋予VHLR表型的不同基因会影响这种形式的光保护。而是,在VHL下生长的所有VHLR突变体中,每生物量的叶绿素含量下降表明这些基因可能与调节天线成分和光系统化学计量有关。

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