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首页> 外文期刊>Surface review and letters >THERMOELECTRIC CHARACTERISTICS OF THE THERMOPILE SENSORS PROCESSED WITH THE ELECTRODEPOSITED Bi-Te AND Sb-Te THIN FILMS
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THERMOELECTRIC CHARACTERISTICS OF THE THERMOPILE SENSORS PROCESSED WITH THE ELECTRODEPOSITED Bi-Te AND Sb-Te THIN FILMS

机译:电沉积Bi-Te和Sb-Te薄膜处理的热电传感器的热电特性

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摘要

A thermopile sensor composed of 196 pairs of p-n thin film legs was processed on a glass substrate by using successive electrodeposition of the n-type Bi-Te and the p-type Sb-Te thin films. The 5.3-μm thick Bi-Te film, electrodeposited at a constant voltage of -50 mV in the 50-mM electrolyte with the Bi/(Bi + Te) mole ratio of 0.5, exhibited a Seebeck coefficient of -67 μV/K. The 5.2-μm thick Sb-Te film, electrodeposited at a constant voltage of 20 mV in the 70-mM solution with the Sb/(Sb + Te) mole ratio of 0.9, possessed a Seebeck coefficient of 63 μV/K. The thermopile sensor exhibited the sensitivities of 13.1 mV/K with temperature differences smaller than 9K and of 27.3 mV/K with temperature differences larger than 9K respectively, across the hot and cold ends.
机译:通过连续电沉积n型Bi-Te和p型Sb-Te薄膜,在玻璃基板上处理由196对p-n薄膜腿组成的热电堆传感器。 5.3μm厚的Bi-Te膜在Bi /(Bi + Te)摩尔比为0.5的50 mM电解质中以-50 mV的恒定电压电沉积,表现出-67μV/ K的塞贝克系数。 Sb /(Sb + Te)摩尔比为0.9的5.2μm厚Sb-Te膜在20mV恒定电压下在70mM溶液中电沉积,其塞贝克系数为63μV/ K。在热端和冷端,热电堆传感器的灵敏度分别为:温度差小于9K的13.1 mV / K和温度差大于9K的27.3 mV / K。

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