Design aspects for fixed dimension TE_(011) mode high-Q HTS shielded sapphire dielectric resonators for low-temperature electronics applications

摘要

We optimized the aspect ratio of a sapphire puck for a Hakki-Coleman-type high-temperature superconductive (HTS) thin film shielded sapphire dielectric resonator (SDR) to get the maximum Q-value, Q_0, of the SDR at the frequencies 10, 15 and 20 GHz. For the simulation, we used the exact expressions for the geometrical factors of various parts of the SDR obtained by the Q-value definition. The SDR analysis is made by using HTS thin films deposited on 1 inch diameter and 10 mm X 10 mm substrates. The analysis suggests that the optimum aspect ratio of the sapphire puck depends o the surface resistance of the optimum aspect ratio of the sapphire puck depends on the surface resistance of the HTS thin films to get the maximum Q-value of the SDR. This analysis can be very useful for the design of a HTS shielded sapphire SDR of desired size within the available space for its application.