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Noise of dc-SQUIDs with planar sub-micrometer Nb/HfTi/Nb junctions

机译:平面亚微米Nb / HfTi / Nb结的dc-SQUID的噪声

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We have fabricated Nb-based dc-SQUIDs with sub-micrometer planar Nb/HfTi/Nb junctions in order to investigate their noise performance. The SQUIDs are of simple coplanar design, their nominal inductance is ca. 15 pH. Electron beam lithography and chemical-mechanical polishing have been used to realize junctions with cross sections areas as low as about 100 x 100 nm(2). The SQUIDs exhibit pronounced excess noise increasing towards lower frequencies. This apparent flux noise arises from fluctuations of the junction critical currents or resistances. The Nb/HfTi/Nb junction critical currents are found to be strongly temperature dependent. Upon cooling below ca. 4 K the SQUIDs start to show current-voltage characteristics with negative differential resistances, and their flux noise increases significantly. Estimation of the HfTi barrier electron temperature indicates that the degradation of the SQUID properties towards lower temperature is caused by self-heating effects.
机译:我们已经制造了具有亚微米平面Nb / HfTi / Nb结的基于Nb的dc-SQUID,以研究其噪声性能。 SQUID具有简单的共面设计,其标称电感为。 15 pH。电子束光刻和化学机械抛光已用于实现横截面面积低至约100 x 100 nm(2)的结。 SQUID表现出明显的过大噪声,并朝着低频方向增加。这种明显的磁通噪声是由结临界电流或电阻的波动引起的。发现Nb / HfTi / Nb结的临界电流与温度密切相关。冷却至约4 K SQUID开始显示具有负差分电阻的电流-电压特性,并且其通量噪声显着增加。 HfTi势垒电子温度的估计表明,SQUID性能向较低温度的降低是由自热效应引起的。

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