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Electronic conduction and stability of solid electrolytes based on lanthanum gallates

机译:没食子酸镧基固体电解质的电子传导和稳定性

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The electronic conductivity of some Sr- and Mg-doped lanthanum gallates was measured as a function of the oxygen activity in the p(O2) range of about 10(1)-10(-17) bar using the Hebb-Wagner polarization technique. The investigated compositions were La0.8Sr0.2Ga1-xMgyO3-delta with y=0.15, 0.2, (La0.8Sr0.2)(0.95)Ga0.8Mg0.2O3-delta (LSGM19/20), and the Nd-doped (La0.9Nd0.1)(0.8)Sr0.2Ga0.8Mg0.2O3-delta (LNSGM). Sintered dense pellets of the samples were contacted with glass encapsulated ion-blocking Pt or An microcontacts in pure N-2 atmosphere and a Cu2O/CuO reference electrode. The temperatures ranged between 600 and 750 degreesC. For p(O2)>10(-8) bar, all samples showed p-type conductivity with the expected dependence sigma(h) proportional to p(O2)(1/4) and a weak temperature influence. For p(O2)<10(-12) bar, n-type conduction was found which, however, did not give a Corresponding a sigma(e)p(O2)(-1/4) dependence. Instead, the electronic conductivity approached a limiting value below about p(O2)=10(-15) bar. This result and the observation of an additional irreversible current drift after cathodic polarization for long times suggested a degradation of the materials in the low p(O2) range. This was most probably caused by the loss of Ga2O and/or by the formation of PtGax-alloys. Both effects can explain the observed limitation of the electron concentration in the n-type range. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 21]
机译:使用Hebb-Wagner极化技术,在约10(1)-10(-17)bar的p(O2)范围内,测量了一些掺Sr和Mg的镓酸镧镧的电子电导率,作为氧活度的函数。研究的成分为y = 0.15、0.2,(La0.8Sr0.2)(0.95)Ga0.8Mg0.2O3-delta(LSGM19 / 20)和Nd掺杂(La0 .9Nd0.1)(0.8)Sr0.2Ga0.8Mg0.2O3-δ(LNSGM)。在纯N-2气氛和Cu2O / CuO参比电极中,将样品的烧结致密颗粒与玻璃封装的离子阻挡Pt或An微接触。温度在600至750℃之间。对于p(O2)> 10(-8)bar,所有样品均显示出p型电导率,其预期依赖性sigma(h)与p(O2)(1/4)成比例,并且温度影响较小。对于p(O2)<10(-12)bar,发现了n型导电,但是它没有给出与sigma(e)p(O2)(-1/4)相对应的依赖性。取而代之的是,电子电导率接近低于约p(O2)= 10(-15)bar的极限值。该结果以及长期观察到的阴极极化后出现的其他不可逆电流漂移的现象表明,在低p(O2)范围内材料会降解。这很可能是由Ga2O的损失和/或PtGax合金的形成引起的。两种效应都可以解释观察到的电子浓度在n型范围内的局限性。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:21]

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