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Sn-substituted LiMn_2O_4 thin films prepared by RF magnetron sputtering

机译:射频磁控溅射制备Sn取代的LiMn_2O_4薄膜

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摘要

The spinel thin films of LiMn_2O_4 and LiSn_(0.0125)Mn_(1.975)O_4 prepared by RF magnetron sputtering were studied with focusing on structural and electrochemical properties. The LiSn_(0.0125)Mn_(1.975)O_4 thin films showed the superior properties, i.e., a high capacity retention of 94% at the current rate of 5 C after 90 cycles, due to the increase in Mn valence and the decrease in oxygen deficiency. The larger oxygen deficiency in undoped LiMn_2O_4 thin films was confirmed by the increased lattice volume and structural degeneration.
机译:研究了射频磁控溅射制备的尖晶石型LiMn_2O_4和LiSn_(0.0125)Mn_(1.975)O_4的尖晶石薄膜。 LiSn_(0.0125)Mn_(1.975)O_4薄膜表现出优越的性能,即由于90循环后锰价的增加和氧缺乏的减少,在电流为5 C的情况下,在90循环后的容量保持率高达94%。 。未掺杂的LiMn_2O_4薄膜中较大的氧缺乏是由晶格体积增加和结构变性所证实的。

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