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Effects of electric and magnetic fields on the electronic properties of zigzag carbon and boron nitride nanotubes

机译:电场和磁场对之字形碳和氮化硼纳米管电子性能的影响

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We have investigated the electronic properties of zigzag CNTs and BNNTs under the external transverse electric field and axial magnetic field, using tight binding approximation. It was found that after switching on the electric and magnetic fields, the band modification such as distortion of the degeneracy, change in energy dispersion, subband spacing and band gap size reduction occurs. The band gap of zigzag BNNTs decreases linearly with increasing the electric field strength but the band gap variation for CNTs increases first and later decreases (Metallic) or first hold constant and then decreases (semiconductor). For type (II) CNTs, at a weak magnetic field, by increasing the electric field strength, the band gap remains constant first and then decreases and in a stronger magnetic field the band gap reduction becomes parabolic. For type (III) CNTs, in any magnetic field, the band gap increases slowly until reaches a maximum value and then decreases linearly. Unlike to CNTs, the magnetic field has less effects on the BNNTs band gap variation.
机译:我们使用紧密结合近似研究了在外部横向电场和轴向磁场作用下之字形CNT和BNNT的电子性能。已经发现,在接通电场和磁场之后,会发生频带改变,例如简并畸变,能量色散变化,子频带间距和带隙尺寸减小。之字形BNNT的带隙随电场强度的增加而线性减小,但CNT的带隙变化先增大,然后减小(金属),或先保持恒定,然后减小(半导体)。对于类型(II)的CNT,在弱磁场下,通过增加电场强度,带隙首先保持恒定,然后减小,而在较强的磁场中,带隙减小变为抛物线形。对于类型(III)的CNT,在任何磁场中,带隙缓慢增加直到达到最大值,然后线性减小。与CNT不同,磁场对BNNT的带隙变化影响较小。

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