Improved empirical method for calculating short circuit current density images of silicon solar cells from saturation current density images and vice versa

摘要

An empirical dependence of the short circuit current density J(sc) as a function of the dark saturation current density J(01) is proposed, which describes this dependence down to a bulk lifetime of 1 ns. This method avoids artifacts, which appear when applying the previously proposed quadratic dependence. The parameters of the new dependence are fitted to PC1D simulations and to experimental LBIC results for various wavelengths and AM 1.5 for a typical industrial BSF-type solar cell and a PERC cell. This dependence can also be used to calculate J(01) images from LBIC-based J(sc) images. It turns out that this method is more reliable in BSF than in PERC cells. (C) 2016 Elsevier B.V. All rights reserved.