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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Optical and electrical properties of ITO thin films sputtered on flexible FEP substrate as passive thermal control system for space applications
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Optical and electrical properties of ITO thin films sputtered on flexible FEP substrate as passive thermal control system for space applications

机译:溅射在柔性FEP基板上的ITO薄膜的光学和电学性质,作为空间应用的被动热控制系统

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ITO thin films were deposited on flexible fluorinated ethylene propylene (FEP) substrates by pulsed direct current reactive magnetron sputtering system using an In:Sn (90%-10% wt.) alloy target. The influence of the deposition parameters (argon and oxygen flow rates, and substrate temperature) and effect of coating thickness on the optical, electrical, structural and microstructural properties of ITO thin films deposited on PEP was investigated. The thickness of the ITO coatings was varied from 5 to 180 nm. The optimized ITO coating (10 nm thick) exhibited high IR emittance (79%) on FEP substrate with high average solar transmittance (94.0%) and moderate sheet resistance (3 k Omega/sq.). We also investigated in detail the angular dependence of reflectance as well as haze factor of thin ITO coatings. Our results suggest that 10 nm thick ITO coating exhibits an average haze factor of 8.6%. The high value of IR emittance, moderate sheet resistance and high solar transmittance along with low haze factor indicate the suitability of ITO thin films on PEP substrates as flexible optical solar reflector for space applications. (C) 2015 Elsevier B.V. All rights reserved.
机译:通过使用In:Sn(90%-10%wt。)合金靶的脉冲直流反应磁控溅射系统将ITO薄膜沉积在柔性氟化乙烯丙烯(FEP)基板上。研究了沉积参数(氩气和氧气的流量以及基底温度)以及涂层厚度对在PEP上沉积的ITO薄膜的光学,电学,结构和微结构性质的影响。 ITO涂层的厚度在5至180nm之间变化。优化的ITO涂层(10纳米厚)在FEP基板上显示出高的IR发射率(79%),具有高的平均日光透射率(94.0%)和中等的薄层电阻(3 k Omega / sq。)。我们还详细研究了薄ITO涂层的反射率与雾度的角度依赖性。我们的结果表明,10 nm厚的ITO涂层的平均雾度为8.6%。高的红外发射率值,适度的薄层电阻和高的日光透射率以及低的雾度系数表明,PEP基板上的ITO薄膜适合用作空间应用的柔性光学太阳光反射器。 (C)2015 Elsevier B.V.保留所有权利。

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