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Bandgap Tuning by Using a Lattice Distortion Induced by Two Symmetries That Coexist in a Quantum DotBandgap Tuning by Using a Lattice Distortion Induced by Two Symmetries That Coexist in a Quantum Dot

机译:通过使用在量子点中共存的两个对称性引起的晶格畸变进行带隙调谐通过使用在量子点中共存的两个对称性引起的晶格畸变进行带隙调谐

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摘要

Among the interests in the application of quantum dots (QDs), the bandgap tuning is of key importance in controlling their material properties. The bandgap of a QD can be adjusted by adopting a variety of different physicochemical methods. Herein, a novel way of the bandgap tuning is developed in an Ag2S-based QD system by suitably quenching the transformation from mono clinic Ag2S to cubic Ag and by subsequently inducing a lattice-distorted region of ≈1-nm-scale in a QD. The two distinct crystalline phases of Ag2S and Ag coexisting with the lattice-distorted region are experimentally demonstrated by visually showing this remarkable coexistence in a QD. A new approach is presented to the bandgap tuning (2.51 to 1.64 eV) and enhancing optical properties by suitably tailoring the degree of the lattice-distorted region in a QD. This conceptual method could pave a new way to utilizing quantum effects in various QD applications.
机译:在应用量子点(QD)的兴趣中,带隙调谐对于控制其材料特性至关重要。量子点的带隙可以通过采用各种不同的物理化学方法来调节。在本文中,通过适当地淬灭从单门诊Ag2S到立方Ag的转变并随后在QD中诱发≈1nm尺度的晶格畸变区域,在基于Ag2S的QD系统中开发了一种带隙调谐的新方法。通过在QD中肉眼观察到这种明显的共存,实验证明了与晶格变形区共存的Ag2S和Ag两个不同的结晶相。通过适当地调整QD中晶格畸变区域的程度,提出了一种新的方法来进行带隙调谐(2.51至1.64 eV)并增强光学性能。这种概念上的方法可以为在各种QD应用中利用量子效应铺平道路。

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