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Controlling errors in recursive Fermi-Dirac operator expansions with applications in electronic structure theory

机译:递归Fermi-Dirac算子展开式中的控制误差及其在电子结构理论中的应用

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摘要

Recursive Fermi-Dirac operator expansion is an efficient way to compute one-electron density matrices in electronic structure theory. The convergence is rapid and depends only weakly on the conditioning of the problem and, for many systems, the computational cost increases only linearly with system size. In this article, errors introduced when evaluating the recursive expansion are analyzed and schemes to control the forward error are proposed. The error has previously been analyzed for explicit schemes working at zero electronic temperature [J. Chem. Phys., 128 (2008), 074106]. Here, implicit schemes [Phys. Rev. B, 68 (2003), 233104] working at zero or finite temperature are treated. The proposed schemes for error control are demonstrated by tight-binding as well as density functional theory electronic structure calculations on several test systems. Condition numbers for the problem of computing the density matrix are derived, giving quantitative insight into under what circumstances a temperature dependent formulation results in better conditioning. It is shown that for the considered recursive expansions, the number of matrix-matrix multiplications needed to compute the density matrix increases only with the squared logarithm of the condition number of the problem.
机译:递归Fermi-Dirac算子展开是电子结构理论中计算单电子密度矩阵的有效方法。收敛速度很快,并且只在很小的程度上取决于问题的条件,对于许多系统,计算成本仅随系统大小线性增加。在本文中,分析了在评估递归扩展时引入的错误,并提出了控制前向错误的方案。先前已经针对在零电子温度下工作的显式方案分析了该错误[J.化学物理学报,128(2008),074106]。在这里,隐式方案[Phys。 Rev. B,68(2003),233104]在零或有限温度下工作。通过紧密绑定以及在多个测试系统上的密度泛函理论电子结构计算,证明了所提出的错误控制方案。推导了计算密度矩阵问题的条件数,从而定量地了解了在什么情况下依赖温度的配方会导致更好的调节。结果表明,对于考虑的递归展开,计算密度矩阵所需的矩阵矩阵乘法次数仅随问题条件数的平方对数增加而增加。

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