14-inch AMOLED TV Driven by HfInZnO Thin-Film Transistors

摘要

A full-color 14-inch active matrix organic light emitting diode (AMOLED) TV, which does not suffer from the well-known pixel non-uniformity of luminance using a simple pixel circuit design consisting of 3 transistors and 1 capacitor, has been developed using amorphous hafnium-indium-zinc oxide (a-HIZO) thin-film transistors (TFTs) as an active-matrix backplane. The n-channel a-HIZO TFTs exhibit a field-effect mobility of 10 cm~2/V-s, threshold voltage of 0.38V, on/off ratio of > 10~8, and subthreshold gate swing of 0.21 V/decade. Notably, the long- and short-range standard deviations for the threshold voltage were less than 0.1V and 0.02 V, respectively.