5.8' Ultra-Narrow Border LCD with Soluble Metal-Oxide TFTs and Integrated with GIP Circuit

摘要

For the first time, solution based metal-oxide semiconductor is successfully implemented in TFT-LCD production line. The well-known slot-die coating technology is used to deposit liquid phase semiconductor on Gen4 substrates. Fabricated backplane with integrated gate-in-panel (GIP) circuitry is used to develop 5.8" TFT-LCD with ultra-narrow border (< 1 mm), a first panel of its kind which is closed to full commercialization.