Highly Efficient Inverted OLEDs Using a New Transparent Amorphous Oxide Semiconductor

摘要

Highly efficient inverted OLED was fabricated by using a newly developed new transparent amorphous oxide semiconductor (TAOS) for an electron transport layer. This new TAOS has high mobility (～1cm~2/Vs), low work function (～3.5 eV), sufficient chemical stability and high transparency, and can form Ohmic contact with conventional electrodes (ITO, Al, etc.).