首页> 外文期刊>Sensors and Actuators, A. Physical >NEW METHODS FOR MEASURING MECHANICAL PROPERTIES OF THIN FILMS IN MICROMACHINING - BEAM PULL-IN VOLTAGE (V-PI) METHOD AND LONG BEAM DEFLECTION (LBD) METHOD
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NEW METHODS FOR MEASURING MECHANICAL PROPERTIES OF THIN FILMS IN MICROMACHINING - BEAM PULL-IN VOLTAGE (V-PI) METHOD AND LONG BEAM DEFLECTION (LBD) METHOD

机译:测量微细薄膜力学性能的新方法-束拉电压(V-PI)和长束挠度(LBD)方法

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摘要

New stress-measurement methods for determining both tensile and compressive stress and Young's modulus in surface micromachining are presented. The investigation is concentrated on the development of two techniques: (1) beam pull-in voltage (V-PI) and (2) long beam deflection (LBD). The V-PI method is based on the pulling down of the upper electrode (beam) when the voltage between two electrodes exceeds a critical level. Both tensile and compressive stress and Young's modulus of a thin film can be derived using this method. the LBD method, on the other hand, converts the axial strain in the beam into a transverse deflection w(x) after the structure is released to be free standing; this deflection is large enough to be measured easily. These techniques have been analysed and tested experimentally. A comparison with other known stress-measurement techniques shows good agreement using polysilicon films. Both techniques have been shown to be quite promising for simple and accurate on-chip thin-film stress measurements. [References: 8]
机译:提出了确定表面微加工中拉伸应力和压缩应力以及杨氏模量的新的应力测量方法。研究集中在两种技术的开发上:(1)光束引入电压(V-PI)和(2)长光束偏转(LBD)。当两个电极之间的电压超过临界水平时,V-PI方法基于上电极(电子束)的下拉。薄膜的拉伸应力和压缩应力以及杨氏模量都可以使用该方法导出。另一方面,LBD方法将结构释放为自由状态后,将梁中的轴向应变转换为横向挠度w(x)。挠度足够大,很容易测量。这些技术已经过分析和实验测试。与其他已知应力测量技术的比较表明,使用多晶硅膜具有良好的一致性。这两种技术已被证明对于简单而准确的片上薄膜应力测量非常有前途。 [参考:8]

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