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Improving bandwidth and return loss of Si-based MEMS antenna using suspending and electromagnetic band-gap structures

机译:利用悬浮和电磁带隙结构改善基于Si的MEMS天线的带宽和回波损耗

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摘要

A novel Si-based MEMS antenna with topside suspending and backside electromagnetic band-gap (EBG) structures is developed in this study to improve its high-frequency performances. The proposed Si-based micromachined antenna with dimensions of only 7 mm × 22 mm × 0.5 mm is constructed of a 0.2 μm-thick copper ground plane, six 10 μm-thick copper supporting vias, a 6 μm-thick suspending F-shape copper conducting layer and 3 × 9 arrayed silicon cavities (to form the backside EBG structure). Using the Taguchi method and commercial Ansoft-HFSS simulation software, the dimension of EBG structure is optimized (1.66 mm × 1.66 mm × 0.35 mm) for development of a Si-based MEMS antenna with low loss and broadband. The implemented Si-based antenna demonstrates very low return loss (-35.5 dB, at 4.85 GHz) and wide fractional bandwidth (FBW = 43%, at 3.75-5.8 GHz), which approximately matches with the simulated results (return loss = -41.6 dB and FBW = 36%) at 5.15 GHz.
机译:本研究开发了一种新型的基于Si的MEMS天线,具有顶部悬挂和背面电磁带隙(EBG)结构,以改善其高频性能。拟议的基于Si的微加工天线,尺寸仅为7 mm×22 mm×0.5 mm,由0.2μm厚的铜接地平面,六个10μm厚的铜支撑通孔,6μm厚的悬浮F形铜构成导电层和3×9排列的硅腔(以形成背面EBG结构)。使用Taguchi方法和商业化的Ansoft-HFSS仿真软件,对EBG结构的尺寸进行了优化(1.66 mm×1.66 mm×0.35 mm),以开发低损耗和宽带的基于Si的MEMS天线。已实现的基于硅的天线展示出非常低的回波损耗(在4.85 GHz时为-35.5 dB)和较宽的分数带宽(在3.75-5.8 GHz时为FBW = 43%),与模拟结果大致相符(回波损耗= -41.6 dB和FBW = 36%)在5.15 GHz。

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