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Fabrication and characteristics of a PECVD SiC evanescent wave optical sensor

机译:PECVD SiC van逝波光学传感器的制备和特性

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This work presents a simple evanescent wave-sensing system based on plasma-enhanced chemical vapour deposition (PECVD) silicon carbide (SiC) waveguides. Thin SiC films were deposited on Si substrates with a SiO2 film acting as a cladding layer around the carbide core. In the sensor, the evanescent tale of the light travelling in a waveguide senses an absorbant medium placed above the waveguide. By using a 1 x 2 power splitter, the sensor is calibrated using one arm as a reference. This shows that the sensitivity of such a sensor is improved by choosing SiC as waveguide material compared to silicon nitride (SiN) films. (c) 2007 Elsevier B.V. All rights reserved.
机译:这项工作提出了一个基于等离子体增强化学气相沉积(PECVD)碳化硅(SiC)波导的简单瞬逝波感测系统。 SiC薄膜沉积在Si基板上,SiO2薄膜充当碳化物核周围的覆层。在传感器中,在波导中传播的光的消失故事感测了放置在波导上方的吸收剂介质。通过使用1 x 2功率分配器,使用一只手臂作为参考对传感器进行校准。这表明,与氮化硅(SiN)膜相比,通过选择SiC作为波导材料可以提高这种传感器的灵敏度。 (c)2007 Elsevier B.V.保留所有权利。

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