Thermoelectric properties of Cu-doped p-type pseudo-binary Cu_xBi_(0.5)Sb_(1.5-x)Te_3 (x = 0.05-0.4) alloys prepared by spark plasma sintering

摘要

Measurements conducted on the Cu-doped Cu_xBi_(0.5)Sb_(1.5-x)Te_3 (x = 0.05-0.4) alloys show that their electrical conductivities are approximately 8.6 and 2.3 times those of the ternary Bi_(0.5)Sb_(1.5)Te_3 alloy at room temperature and 558 K, respectively, and reveal a drastic reduction of lattice thermal conductivities after Cu doping. The highest dimensionless figure of merit ZT of 1.2 is achieved for the materials with x = 0.05 at 442 K, being approximately 2.1 times that of typical ternary Bi_(0.5)Sb_(1.5)Te_3 alloy at room temperature.