Chemical driving force for diffusion-induced recrystallization or diffusion-induced grain boundary migration in a binary system consisting of nonvolatile elements

摘要

A new model has been proposed to evaluate the chemical driving force for diffusion-induced recrystallization (DIR) or diffusion-induced grain boundary migration in the A(B) system, where elements A and B are nonvolatile at solid-state reaction temperatures. The experimental results for DIR in the Ag(Sn) and Cu(Ni) systems in previous studies have been numerically analyzed using the new model. The analyses indicate that a region with discontinuously different composition is formed by DIR in the early stages of the reaction with the maximum driving force.