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Effect of zirconia addition on dielectric loss and microstructure of aluminum nitride ceramics

机译:添加氧化锆对氮化铝陶瓷介电损耗和微观结构的影响

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摘要

The effects of sintering additives on dielectric loss tangent of A1N ceramics have been investigated. Different amounts of Y_2O_3 and ZrO_2 were added as sintering additives to ALN powder and pressureless sintering was performed at 1900 deg C for 2 h in a flowing nitrogen atmosphere. ZrN phase was detected in A1N ceramics when ZrO_2 addition was more than 0.1 mol. percent. Densification behavior of both Y_2O_3 and ZrO_2 doped A1N ceramics was found to be a little complicated, however addition of ZrO_2 was effective in the densification of the A1N ceramics, tan delta is found to increase from less than 1 x 10~(-3) to around 6 x 10~(-3) when ZrO_2 content was more than 0.1 mol. percent.
机译:研究了烧结助剂对AlN陶瓷介电损耗角正切的影响。将不同量的Y_2O_3和ZrO_2作为烧结添加剂添加到ALN粉末中,并在流动的氮气气氛中于1900摄氏度进行2小时的无压烧结。当ZrO_2添加量大于0.1 mol时,在AlN陶瓷中检测到ZrN相。百分。发现Y_2O_3和ZrO_2掺杂的AlN陶瓷的致密化行为有些复杂,但是ZrO_2的添加对AlN陶瓷的致密化有效,发现tanδ从小于1 x 10〜(-3)增加到ZrO_2含量大于0.1 mol时约为6 x 10〜(-3)。百分。

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