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首页> 外文期刊>Oxidation of Metals >The Effect of Si Additions on the High-Temperature Oxidation of a Ternary Ni-10Cr-4Al Alloy in 1 ATM O_2 AT 900-1000 deg C
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The Effect of Si Additions on the High-Temperature Oxidation of a Ternary Ni-10Cr-4Al Alloy in 1 ATM O_2 AT 900-1000 deg C

机译:硅的添加对900-1000℃1 ATM O_2中三元Ni-10Cr-4Al合金高温氧化的影响

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摘要

The oxidation of four Ni-10Cr-ySi-4Al alloys has been studied in 1 atm O_2 at 900 and 1000 deg C to examine the effects of various Si additions on the behavior of the ternary alloy Ni-10Cr-4Al, which during an initial stage formed external NiO scales associated with an internal oxidation of Cr + Al, later replaced by the growth of a chromia layer at the base of the scale plus an internal oxidation of Al. The addition of 2 at. percent Si was able to prevent the oxidation of nickel already from the start of the test, but was insufficient to form external alumina scales at 1000 deg C, while at 900 deg C alumina formed only over a fraction of the alloy surface. At 1000 deg C the addition of 4 at. percent Si produced external chromia scales plus a region of internal oxidation of Al and Si, a scaling mode which formed over a fraction of the alloy surface in combination with alumina scales also by oxidation at 900 deg C. Conversely, the presence of about 6 at. percent Si produced external alumina scales over the whole sample surface at 900 deg C, but only over about 60 percent of the alloy surface at 1000 deg C. The changes in the oxidation modes of the ternary Ni-10Cr-4Al alloy produced by Si additions have been interpreted by extending to these quaternary alloys the mechanism of the third-element effect based on the attainment of the critical volume fraction of internal oxides needed for the transition to the external oxidation of the most-reactive-alloy component, already proposed for ternary alloys.
机译:已经在900和1000摄氏度的1 atm O_2中研究了四种Ni-10Cr-ySi-4Al合金的氧化,以研究各种Si添加对三元Ni-10Cr-4Al合金行为的影响。阶段形成了与Cr + Al的内部氧化相关的外部NiO氧化皮,随后被氧化皮底部的氧化铬层的生长和Al的内部氧化所代替。在2处相加。从测试开始就已经有百分之百的Si能够防止镍的氧化,但是不足以在1000℃下形成外部氧化铝水垢,而在900℃下仅在一部分合金表面上形成氧化铝。在1000℃下添加4at。 Si的百分含量产生外部氧化铬皮,加上Al和Si的内部氧化区域,在铝合金表面的一部分上形成的氧化皮模与氧化铝皮也通过在900℃下氧化而形成。相反,在70℃存在约6 。 Si的百分含量在900℃时会在整个样品表面上生成外部氧化铝水垢,但在1000℃时仅占合金表面的约60%。已经通过将四元合金扩展到这些四元合金中来解释了第三元素效应的机理,该机理是基于达到已为三元合金提出的过渡到最活泼的合金组分的外部氧化所需的内部氧化物的临界体积分数合金。

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