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Synthesis of carbon-free Si_3N_4/SiC nanopowders using silica fume

机译:硅粉法合成无碳Si_3N_4 / SiC纳米粉体

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摘要

We have investigated a possible method of synthesizing carbon-free, nano-silicon nitride-silicon carbide (Si_3N_4/SiC) powders from the waste silica fume for the first time, using the integrated mechanical and thermal activation (IMTA) process. This novel process results in the formation of nano-Si_3N_4/SiC powders at 1465 °C with crystallite sizes as small as 45 nm. In order to synthesize carbon-free nano-Si_3N_4/SiC powders, two different approaches, one using the H_2 gas and the other using air, have been studied for their effectiveness in removing the free carbon present. It is found that the H_2 treatment is not very effective although both Si_3N_4 and SiC are stable during the H_2 treatment. In contrast, removing the free carbon using air is effective, and the limited oxidation of nano-Si_3N_4 and SiC can be achieved if the air treatment is terminated soon after the free carbon is eliminated. This study has provided a clear pathway and understanding for effectively synthesizing carbon-free, nano-Si_3N_4/SiC powders from the silica fume.
机译:我们首次使用集成的机械和热活化(IMTA)工艺,研究了一种从废硅粉中合成无碳的纳米碳氮化硅-碳化硅(Si_3N_4 / SiC)粉末的可能方法。这种新颖的工艺导致在1465°C的条件下形成纳米Si_3N_4 / SiC粉末,其晶粒尺寸小至45 nm。为了合成无碳的纳米Si_3N_4 / SiC粉末,已经研究了两种不同的方法,一种使用H_2气体,另一种使用空气,可以有效去除存在的自由碳。发现尽管H_2处理期间Si_3N_4和SiC都稳定,但是H_2处理不是非常有效。相反,使用空气去除游离碳是有效的,并且如果在去除游离碳之后立即终止空气处理,则可以实现纳米Si_3N_4和SiC的有限氧化。这项研究为从硅粉中有效合成无碳纳米Si_3N_4 / SiC粉提供了清晰的途径和理解。

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