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Prebreakdown Excitation of Crystals at Double Multiphoton Resonance: II. Analysis of the Effects of Transformation of Electronic Band Spectrum

机译:双多光子共振时晶体的预击穿激发:II。电子带谱变换的影响分析

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摘要

The probabilities of multiphoton transitions between the valence and conduction bands at two-photon resonance on the adjacent transition between two conduction bands are calculated within the three-band model of a crystal. It is shown that, due to the effects of transformation of electronic band spectrum in the field of a strong light wave, the dependence of the multiphoton generation rate of electron-hole pairs on the light intensity j contains ranges where a small change in j leads to an increase in the generation rate of electron-hole pairs by several orders of magnitude, which may increase the number of nonequilibrium carriers to the level sufficient for initiating destruction of the material.
机译:在晶体的三波段模型中,计算了在两个导带之间的相邻跃迁处,在双光子共振时在价带和导带之间发生多光子跃迁的概率。结果表明,由于强光波场中电子能带谱的变换的影响,电子-空穴对的多光子产生率对光强度j的依赖性包括j导数变化很小的范围。电子-空穴对的生成速率增加了几个数量级,这可能将非平衡载流子的数量增加到足以引发材料破坏的水平。

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