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Luminescence and Thermally Stimulated Recombination Processes in Li_(6)Gd(BO_(3))_(3):Ce~(3+) Crystals

机译:Li_(6)Gd(BO_(3))_(3):Ce〜(3+)晶体的发光和热激发复合过程

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摘要

The luminescence and thermally stimulated recombination processes in lithium borate crystals Li_(6)Gd(BO_(3))_(3) and Li_(6)Gd(BO_(3))_(3):Ce have been studied. The steady-state luminescence spectra under X-ray excitation (X-ray luminescence), temperature dependences of the intensity of steady-state X-ray luminescence (XL), and thermally stimulated luminescence (TSL) spectra of these compounds have been investigated in the temperature range of 90-500 K. The intrinsic-luminescence 312-nm band, which is due to the ~(6)P_(J) -> ~(8)S_(7/2) transitions in Gd~(3+) matrix ions, dominates in the X-ray luminescence spectra of these crystals; in addition, there is a wide complex band at 400-420 nm, which is due to the d -> f transitions in Ce~(3+) impurity ions. It is found that the steady-state XL intensity in these bands increases several times upon heating from 100 to 400 K. The possible mechanisms of the observed temperature dependence of the steady-state XL intensity and their correlation with the features of electronic-excitation energy transfer in these crystals are discussed. The main complex TSL peak at 110-160 K and a number of minor peaks, whose composition and structure depend on the crystal type, have been found in all crystals studied. The nature of the shallow traps that are responsible for TSL at temperatures below room temperature and their relation with defects in the lithium cation sublattice are discussed.
机译:研究了硼酸锂晶体Li_(6)Gd(BO_(3))_(3)和Li_(6)Gd(BO_(3))_(3):Ce的发光和热激发复合过程。研究了这些化合物在X射线激发下的稳态发光光谱(X射线发光),稳态X射线发光强度(XL)的温度依赖性以及热激发发光(TSL)光谱。在90-500 K的温度范围内。固有发光312 nm波段,这是由于Gd〜(3+)中的〜(6)P_(J)->〜(8)S_(7/2)跃迁所致)基质离子,在这些晶体的X射线发光光谱中占主导;此外,由于Ce〜(3+)杂质离子中的d-> f跃迁,在400-420 nm处存在宽的复合带。发现在从100 K到400 K加热时,这些带中的稳态XL强度增加了数倍。观察到的稳态XL强度的温度依赖性及其与电子激发能的相关性的可能机理讨论了这些晶体中的转移。在所有研究的晶体中都发现了110-160 K处的主要TSL峰和许多次峰,其组成和结构取决于晶体类型。讨论了在低于室温的温度下导致TSL的浅陷阱的性质及其与锂阳离子亚晶格缺陷的关系。

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