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首页> 外文期刊>Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic >Room temperature performance analysis of bilayer graphene terahertz photodetector
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Room temperature performance analysis of bilayer graphene terahertz photodetector

机译:双层石墨烯太赫兹光电探测器的室温性能分析

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In this paper, the room temperature performance of bilayer graphene terahertz photodetector is studied by calculating of its dark current and dark current limited detectivity at room temperature. In the first step the spectral dependences of the photodetector responsivity as function of the device structural parameters is calculated. It is demonstrated that at the radiation frequency close to the resonant frequencies of plasma oscillations, the responsivity can exhibit sharp and very high maxima corresponding to fairly large responsivity values. In the second step the dark current and dark current limited detectivity for different temperatures, bias voltage, and widths of graphene layer is calculated and analyzed. The obtained results show that for the bilayer graphene photodetector with W=5 nm, L=20 mu m, V-b =2V, V-g = 2 V, value of dark current limited detectivity D-center dot, at room temperature T=300 degrees K and also T= 200 K are 9 x 10(6) (cm root Hz/W) and similar to 6 x 10(9) (cm root Hz/W), respectively. (C) 2015 Elsevier GmbH. All rights reserved.
机译:本文通过计算双层石墨烯太赫兹光电探测器在室温下的暗电流和暗电流极限检出率来研究其室温性能。在第一步中,计算光检测器响应度的光谱依赖性作为器件结构参数的函数。结果表明,在接近等离子体振荡共振频率的辐射频率下,响应度可以显示出非常高的最大值,与相当大的响应度值相对应。在第二步中,计算和分析了针对不同温度,偏置电压和石墨烯层宽度的暗电流和暗电流限制的检测率。获得的结果表明,对于W = 5 nm,L = 20μm,Vb = 2V,Vg = 2 V的双层石墨烯光电探测器,在室温T = 300度K时暗电流限制了检测中心D中心点的值并且T = 200 K分别为9 x 10(6)(cm根Hz / W)和类似于6 x 10(9)(cm根Hz / W)。 (C)2015 Elsevier GmbH。版权所有。

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