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首页> 外文期刊>Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter >Fabrication of double cladding structure in optical multimode fibers using plasma channeling excited by a high-intensity femtosecond laser
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Fabrication of double cladding structure in optical multimode fibers using plasma channeling excited by a high-intensity femtosecond laser

机译:高强度飞秒激光激发的等离子体通道在光学多模光纤中双包层结构的制造

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摘要

Refractive index modification in multimode optical fibers was first demonstrated using the plasma channeling excited by a high-intensity femtosecond (110 fs) Ti: sapphire laser (λ_(p) = 790 nm). The refractive index modification induced in a pure silica multimode step-index fiber with a 100/110 μm core/cladding diameter reached a Iength of approximately 9 ~ 10 mm from the input surface of the optical fiber with the diameters ranging from 5 to 8 μm at input intensities more than 1.5 × 10~(12) W/cm~(2). The graded refractive index profiles were fabricated to be a symmetric form from the center of a multimode fiber and a maximum value of refractive index change (△n) was measured to he 2.1 × 10~(-2). According to the electron spin resonance spectroscopic measurement, it was found that the defect concentration of SiE' center increased significantly in the modified region in relation to that of the region without modification. The plasma self-channeling would induce the refractive index modification with the defects. The intensity profile of the output beam transmitted through the modified multimode fibers showed that the bulk modification produced a double cladding structure. The fabrication method of the double cladding structure in optical fibers can be a useful tool for a variety of applications such as mode converters and single-mode connectors in the fields of optical communication and optical sensor.
机译:首先使用由高强度飞秒(110 fs)Ti:蓝宝石激光器(λ_(p)= 790 nm)激发的等离子体通道,证明了多模光纤中的折射率修改。在纤芯/包层直径为100/110μm的纯二氧化硅多模阶跃折射率光纤中,从光纤的输入表面入射的光强达到约9〜10 mm,直径范围为5至8μm输入强度大于1.5×10〜(12)W / cm〜(2)时。从多模光纤的中心将渐变折射率分布制成对称形式,并且测得的折射率变化最大值(△n)为he×2.1×10〜(-2)。根据电子自旋共振光谱测量,发现相对于未经修饰的区域,SiE′中心的缺陷浓度在经修饰的区域中显着增加。等离子体的自通道化将引起具有缺陷的折射率改变。通过改性多模光纤传输的输出光束的强度分布图表明,整体改性产生了双重包层结构。光纤中的双包层结构的制造方法对于诸如光通信和光传感器领域中的模式转换器和单模连接器之类的各种应用而言可以是有用的工具。

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