Electron and photon induced metal diffusion in amorphous As_(50)Se_(50) thin films coated with two metal layers

摘要

Refractive index change caused by electrons and photons was measured in amorphous As_(50)Se_(50) thin films. Films were coated with Au, Ag, In and with their two-layer combinations. Diffraction gratings were written using electron beam lithography. The diffusion of metals was found to change depending on the timing of the UV-light exposure applied on the films. Sensitivity changes to electrons were found in Ag and Au coated two-layer structures. Sensitivity was dependent on the sequence of the coatings. Au and In two-layer structures instead were found to be almost insensitive to UV light.