From Organosilicon Precursors to Multifunctional Silicon Carbonitride

摘要

Films of silicon carbonitride of variable composition are prepared by the method of plasmochemical decomposition of tetramethyldisilazane, hexamethyldisilazane, and hexamethylcyclotrisila-zane in the mixture with helium in the temperature range of 373-973 K. The chemical composition of the low temperature films (373-673 K) is described by the formula SiC_xN_yO_z:H, whereas that of high temperature films, by the formula SiC_xN_y. The films of silicon carbonitride are found to be a nanocomposite material containing an amorphous part and nanocrystals, whose structure is close to the phase α-Si3N4. Films of the composition SiC_xN_yO_z:H are promising as low-k interlayer dielectrics in ultra-large scale integrated circuits of new generation, as well as protecting antireflective coatings and light-emitting diodes.