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首页> 外文期刊>Russian Journal of General Chemistry >Quantum-Chemical Study of Adducts of Germanium Halides with Nitrogen-Containing Donors
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Quantum-Chemical Study of Adducts of Germanium Halides with Nitrogen-Containing Donors

机译:卤化锗与含氮供体加合物的量子化学研究

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摘要

Structural and thermodynamic characteristics of adducts GeX_4 centre dot nL (n =1,2;X =F,Cl,Br;L =NH_3,py,bipy,phen)have been calculated by the B3LYP density functional theory method.The enthalpies of sublimation of complexes trans-GeX_4 centre dot 2py and the adduct GeCl_4 centre dot bipy have been estimated for the first time.The rearrangement energies of the donor and acceptor fragments and the Ge-N bond energies for the 1:1 and 1:2 complexes have been calculated.While the rearrangement energy for germanium halides is lower by 19-63 kJ mol~(-1)than that for silicon halides,the energy of the donor-acceptor bond in the former case is slightly lower.As a result,germanium adducts are slightly more stable than silicon adducts.
机译:通过B3LYP密度泛函理论方法计算了加合物GeX_4中心点nL(n = 1,2; X = F,Cl,Br; L = NH_3,py,bipy,phen)的结构和热力学特性。首次估算了反式GeX_4中心点2py和加合物GeCl_4中心点bipy的配合物。供体和受体片段的重排能以及1:1和1:2配合物的Ge-N键能尽管卤化锗的重排能比卤化硅的重排能低19-63 kJ mol〜(-1),但前者的施主-受主键的能量稍低。结果,锗加合物比硅加合物更稳定。

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