Influenta procesului de delimitare asupra caracteristicilor fotodetectorilor pe baza de PbS

摘要

Photoconductive PbS thin films deposited on glass substrate by Chemical Bath Deposition(CBD)must be delimited for obtaining the suitable configuration.It was applied a photolithographic method using a positive photoresist AZ1350.The influence of reagents and the other treatments used during this process,on the electrical(sheet electrical resistance)and photoelectrical parameters(specific detectivity),ofphotodetectors respectively,was studied.The variation of the parameters was determined after each stage and overall.It was observed that the reagents and the treatments applied in the delimitation process,without reducing the photosensitive area,determined an average increasing of sheet electrical resistance with 40 % and noteworthy improving of detectivity.After diminution of photoconductive area 32,14 times,and adequate thermal treatment,the specific detectivity increased from 10~9 to 10~(11)cm centre dot Hz~(1/2)w~(-1),at 300 K temperature.The studied photolithographic method could be applied successfully in photodetectors manufacturing.