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Synthesis and properties of single crystal TbMn2O5 nanostructures

机译:单晶TbMn2O5纳米结构的合成与性能

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Single crystal nanowire clusters of multiferroic material TbMn2O5 were obtained through a two-step synthesis. These TbMn2O5 nanowires have high crystallinity and a high aspect ratio. They can be as long as tens of micrometers with a minimum diameter of about 20 nm. Analysis based on HRTEM demonstrates their growth direction is along (001). Their growth mechanism was discussed. In the case of magnetism, TbMn2O5 nanowires turn out to be paramagnetic at high temperature and weakly ferromagnetic at low temperature. ZFC and FC curves separated below about 45 K and a transition peak at 4 K of ZFC is observed. A magnetic hysteresis loop of TbMn2O5 measured at 5 K shows a coercivity of 35 Oe. Measurements of the dielectric constant epsilon and dielectric loss tan delta reflect a sustainable upward rising (especially above 200 K) and this tendency increased with the drop of frequencies. Under lower frequencies the peak positions of the dielectric loss shifted towards higher temperature.
机译:通过两步合成,获得了多铁性材料TbMn2O5的单晶纳米线簇。这些TbMn2O5纳米线具有高结晶度和高纵横比。它们可以长达数十微米,最小直径约为20 nm。基于HRTEM的分析表明它们的增长方向是(001)。他们的成长机制进行了讨论。在磁性的情况下,TbMn2O5纳米线在高温下变成顺磁性,而在低温下变成弱铁磁性。观察到ZFC和FC曲线在约45 K以下分离,并在ZFC的4 K处出现过渡峰。在5 K下测得的TbMn2O5磁滞回线显示矫顽力为35 Oe。介电常数ε和介电损耗tanδ的测量反映了可持续的向上上升(特别是在200 K以上),并且这种趋势随着频率的下降而增加。在较低频率下,介电损耗的峰值位置向较高温度移动。

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