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首页> 外文期刊>RSC Advances >Insights into dye design for efficient p-type photoelectrodes: effect of oligothiophene length between the donor and the NiO surface
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Insights into dye design for efficient p-type photoelectrodes: effect of oligothiophene length between the donor and the NiO surface

机译:高效p型光电极染料设计的见解:供体和NiO表面之间的寡噻吩长度的影响

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We report experimental studies of "push-pull" organic dyes with three to six thiophene units as p-spacers, and their application as p-type sensitizers for dye-sensitized solar cells. Different from the widely explored model of increasing spacer length between donor and acceptor, in this paper, the distance between the donor and the semiconductor surface is elongated by inserting thiophene units. The effect of the increased p-spacer is systematically discussed. It turned out that four thiophene units could offer T4 with the highest performance. Further increased length instead, results in decreased J(sc) values and finally decreased efficiencies. We estimate that the longer spacer could effectively prevent charge recombination on the NiO-dye surface, however, the increased thiophene units also decrease the conductance of the oligothiophene spacer, which is unfavorable for hole injection from dye molecule to the valence band of NiO. The results demonstrate that the distance between donor and the semiconductor should be optimized. The appropriate length is required to balance charge recombination and charge transporting efficiency.
机译:我们报告了具有3至6个噻吩单元作为p间隔物的“推挽式”有机染料的实验研究,以及它们作为染料敏化太阳能电池的p型敏化剂的应用。与广泛探讨的增加施主和受主之间的间隔基长度的模型不同,本文通过插入噻吩单元来延长施主与半导体表面之间的距离。系统讨论了增加的p-spacer的影响。事实证明,四个噻吩单元可以为T4提供最高的性能。相反,进一步增加长度会导致J(sc)值降低,并最终导致效率降低。我们估计更长的间隔基可以有效地防止NiO-染料表面上的电荷重组,但是,噻吩单元的增加也会降低寡噻吩间隔基的电导,这不利于从染料分子到NiO价带的空穴注入。结果表明,应优化施主与半导体之间的距离。需要适当的长度以平衡电荷复合和电荷传输效率。

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