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One-minute deposition of micrometre-thick porous Si anodes for lithium ion batteries

机译:一分钟沉积用于锂离子电池的微米级多孔硅阳极

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摘要

We report the rapid vapour deposition of 3-14 mu m-thick porous Si anodes on Cu current collectors in 10-60 s. Such rapid deposition was achieved by heating the Si source to over 2000 degrees C, well above the melting point of Si, while the porous structure was realized in the deposited Si films by keeping the Cu collector at a much lower temperature of 100-500 degrees C. The adhesion between the Cu collectors and Si films was enhanced by forming a CuSix intermixed layer by post-deposition annealing as well as surface treatment of the Cu collectors. Half-cell measurements showed that the porous Si anodes without post-annealing degraded in a few cycles. A markedly improved cycle performance (1000 mA h g(Si)(-1) and 0.66 mA h cm(anode)(-2) at the anode for the 50th cycle) was achieved for post-annealed 3.5 mu m-thick porous Si films. Rapid vapor deposition of micrometre-thick porous Si films using inexpensive, safe Si powder is a practical route to fabricate high-capacity anodes for lithium ion batteries.
机译:我们报告在10-60 s内在Cu集电器上快速蒸镀3-14微米厚的多孔Si阳极。通过将硅源加热到2000摄氏度以上(远远高于硅的熔点)来实现这种快速沉积,而通过将铜集电极保持在100-500摄氏度的较低温度来在沉积的硅膜中实现多孔结构通过沉积后退火以及Cu集电器的表面处理形成CuSix混合层,可增强Cu集电器与Si膜之间的附着力。半电池测量表明,未经后退火的多孔硅阳极在几个循环中退化。后退火的3.5微米厚的多孔硅膜的循环性能得到了显着改善(在第50个循环的阳极处为1000 mA hg(Si)(-1)和0.66 mA h cm(阳极)(-2)) 。使用便宜,安全的硅粉快速气相沉积微米厚的多孔硅膜是制造锂离子电池大容量阳极的实用途径。

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