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An effect of N~+ ion bombardment on the properties of CdTe thin films

机译:N〜+离子轰击对CdTe薄膜性能的影响

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E-beam evaporated CdTe thin films were processed with N~+ ion bombardment as in situ process. The N~+ ion glow was generated using simple Multipurpose Al probe instead of conventional plasma sources. The prepared films were identified as nano crystalline using XRD analysis. High N~+ ion fluence helped to grow (3 11) oriented CdTe thin films instead of (2 2 0) and (111). The observed results revealed the effect of N~+ ion fluence on the structural parameters like lattice parameter, d space value, crystalline size, dislocation density, micro strain etc. The observed optical band gap values lie in between 1.47 and 1.77 eV. The effect of N~+ ion bombardment on optical properties was also reported. Noticeable change in electrical and surface properties was also observed. The observed value shows the reproducibility as < 1% and it is suggested that the N~+ ion plasma was effectively utilized to modify the structural, optical and surface properties as in situ.
机译:电子束蒸发的CdTe薄膜采用N〜+离子轰击原位处理。 N〜+离子辉光是使用简单的多用途Al探针代替常规等离子体源产生的。使用XRD分析将制备的膜鉴定为纳米晶体。高N +离子通量有助于生长(3 11)取向的CdTe薄膜,而不是(2 2 0)和(111)。观测结果揭示了N〜+离子通量对结构参数的影响,例如晶格参数,d空间值,晶体尺寸,位错密度,微应变等。观测到的光学带隙值在1.47和1.77 eV之间。还报道了N +离子轰击对光学性质的影响。还观察到电和表面性能的显着变化。观测值表明可再现性<1%,这表明N〜+离子等离子体可有效地原位改变结构,光学和表面性能。

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