Giant super-Poissonian shot noise in spin-polarized SET structures

摘要

We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer-sized central island with a single electron level, we find that the zero-frequency shot noise diverges as the on-dot spin-flip rate goes to zero, provided the source and drain leads are completely polarized in the same direction. We present an analytical expression for the low-frequency super-Poissonian shot noise that allows one to specify the necessary conditions for the experimental observation of the phenomenon.