...
机译:
Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore;
ASTAR, Inst Mat Res & Engn, 2 Fus Polis Way,Innovis 08-03, Singapore 138634, Singapore;
Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, SingaporeNanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, SingaporeNatl Univ Singapore, Dept Phys, Singapore 117551, Singapore;
机译:Migration enhanced epitaxy growth of GaAs on Si with (GaAs)1minus;x(Si2)xGaAs strained layer superlattice buffer layers
机译:Platinum Germanosilicide Contacts Formed on Strained and Relaxed $hbox{Si}_{1 - x}hbox{Ge}_{x}$ Layers
机译:Platinum Germanosilicide Contacts Formed on Strained and Relaxed $hbox{Si}_{1 - x}hbox{Ge}_{x}$ Layers