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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Effect of a modification site on the electron-transfer reaction of glucose oxidase hybrids modified with phenothiazine via a poly(ethylene oxide) spacer
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Effect of a modification site on the electron-transfer reaction of glucose oxidase hybrids modified with phenothiazine via a poly(ethylene oxide) spacer

机译:修饰位点对吩噻嗪经聚(环氧乙烷)间隔基修饰的葡萄糖氧化酶杂种的电子转移反应的影响

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Glucose oxidase [GOx-(PT-PEONH2)] hybrids are synthesized by attaching phenothiazine (PT) groups to aspartic and glutamic acid residues on the enzyme surface via poly(ethylene oxide) (PEO) spacers of different molecular weights. A fast oxidation of FADH(2)/FADH by PT+ with the aid of the local motion of a hydrophilic, long, flexible PEO spacer is achieved for the GOx-(PT-PEONH2) hybrids and yields greater electron-transfer (ET) rates than that for GOx-(PTNH2) hybrids, in which the PT groups are directly bonded to the GOx surface. The ET rate of GOx-(PT-PEONH2) hybrids depends on the molecular weight of PT-PEONH2, and the maximum is obtained at a molecular weight of 3000. The ET rates of GOx hybrids are compared in terms of the location of the PT modification and the length and structure of the spacer chain connection of the PT mediator to a surface amino acid residue. Greater ET rates are obtained for the modification at aspartic and glutamic acid residues than for the lysine modification when the PT groups are bonded directly or via a short PEO spacer chain. In contrast, no advantage of aspartic and glutamic acid residues over lysine residues in generating a fast oxidation of FADH(2)/FADH by PT+ is observed for GOx hybrids in which the PT groups are attached via longer PEO spacers. The long PEO spacer is able to compensate the disadvantage of lysine residues locating far from the FAD center in GOx hybrids whose mediation reactions are based on the so-called wipe mechanism.
机译:葡萄糖氧化酶[GOx-(PT-PEONH2)]杂化物是通过将吩噻嗪(PT)基团通过不同分子量的聚(环氧乙烷)(PEO)间隔基连接到酶表面的天冬氨酸和谷氨酸残基上而合成的。通过GO +-(PT-PEONH2)杂化剂实现亲水,长而有弹性的PEO间隔物的局部运动,通过PT +快速氧化FADH(2)/ FADH并产生更高的电子转移(ET)速率与PT基团直接键合到GOx表面的GOx-(PTNH2)杂化物相比。 GOx-(PT-PEONH2)杂种的ET率取决于PT-PEONH2的分子量,最大分子量为3000。在PT位置比较GOx杂种的ET率。修饰和PT介体与表面氨基酸残基的间隔链连接的长度和结构。当PT基团直接键合或通过短PEO间隔链键合时,在天冬氨酸和谷氨酸残基处进行修饰所获得的ET速率要比赖氨酸修饰处更高。相反,对于其中PT基团通过更长的PEO间隔基连接的GOx杂种,没有观察到天冬氨酸和谷氨酸残基比赖氨酸残基在通过PT +产生FADH(2)/ FADH的快速氧化中的优势。较长的PEO间隔基能够弥补GOx杂种的调解反应基于所谓擦拭机制的GOx杂种中远离FAD中心的赖氨酸残基的缺点。

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