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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Formation mechanisms and packing structures of alkoxyl and alkyl monolayers on Si(111): Theoretical studies with quantum chemistry and molecular simulation models
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Formation mechanisms and packing structures of alkoxyl and alkyl monolayers on Si(111): Theoretical studies with quantum chemistry and molecular simulation models

机译:Si(111)上烷氧基和烷基单层的形成机理和堆积结构:量子化学和分子模拟模型的理论研究

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摘要

Quantum chemistry and molecular mechanics calculations are performed to study formation mechanisms and packing structures of octadecanal and octadecene monolayers on Si(l 11). The radical chain mechanism is investigated by density functional theory with cluster models. Transition states of key steps involving abstracting a neighboring hydrogen atom from the surface are confirmed with the six-membered ring structures. Energy barriers for abstractions of the surface H to form new reactive surface Si radicals in the substitution of Si(111) via Si-O and Si-C linkages are 18.05 and 14.97 kcal/mol, respectively. Based on the radical chain mechanism, we investigate the linear and zigzag packing structures of alkoxyl chains on Si(111) with substitution percentages of 50%,66.7%, and 75% using a series of two-dimensional repeating cells. By comparison of packing energies of octadecanoyl chains at different substitution percentages, 66.7% is predicted to be an optimal substitution percentage, which agrees with experimental observations. At this surface substitution, packing structures of the monolayer such as tilt angles and film thickness are well correlated with experimental data. The difference in packing structures between monolayers on Si(111) via Si-O and Si-C linkages is rationalized by their different van der Waals radii of surface linkage groups and tilt angles of chains. [References: 51]
机译:进行了量子化学和分子力学计算,以研究Si(l 11)上十八烷和十八烯单层的形成机理和堆积结构。用聚类模型通过密度泛函理论研究了自由基链机理。用六元环结构确认涉及从表面提取相邻氢原子的关键步骤的过渡态。通过Si-O和Si-C键取代Si(111)形成新的反应性表面Si自由基以提取表面H的能垒分别为18.05和14.97 kcal / mol。基于自由基链机制,我们使用一系列二维重复单元研究了Si(111)上烷氧基链的线性和Z字形堆积结构,其取代百分比分别为50%,66.7%和75%。通过比较十八烷酰基链在不同取代率下的堆积能,可以预测66.7%为最佳取代率,与实验结果相符。在这种表面置换下,单层的堆积结构(例如倾斜角和膜厚)与实验数据充分相关。通过Si-O和Si-C键在Si(111)上的单分子层之间的堆积结构差异,是由于表面键合基团的范德华半径和链的倾斜角度不同而合理化的。 [参考:51]

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