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Tailoring interlayer coupling and coercivity in Co/Mn/Co trilayers by controlling the interface roughness

机译:通过控制界面粗糙度来定制Co/Mn/Co三成膜中的层间耦合和矫顽力

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摘要

Epitaxial Co/Mn/Co trilayers with a wedged Mn layer were grown on Cu(001) and studied by magneto-optical Kerr effect measurements. The bottom Co film as well as the Mn film exhibits a layer-by-layer growth mode, which allows to modify both interface roughnesses on the atomic scale by tuning the thicknesses of the films to achieve a certain filling of their topmost atomic layers. The onset of antiferromagnetic order in the Mn layer at room temperature was found at thicknesses of 4.1 (4.8) and 3.4 (4.0) atomic monolayers (ML) for a filled (half-filled) topmost atomic layer of the bottom Co film in Mn/Co bilayers and Co/Mn/Co trilayers, respectively. Magnetization loops with only one step were found for a trilayer with half-filled topmost atomic layer of the bottom Co film, while loops with two separate steps have been observed in trilayers with an integer number of atomic layers in the bottom Co film. The coercivity of the top Co film shows an oscillation with 1 ML period as a function of the Mn thickness above 10 ML, which is interpreted as the influence of the atomic-scale control of the interface roughness on the interface exchange coupling between the antiferromagnetic Mn and the top ferromagnetic (FM) Co layer. The strength of the magnetic interlayer coupling between the top and bottom Co layers through the Mn layer for an integer number of atomic layers in the bottom Co layer, deduced from minor-loop measurements, exhibits an oscillation with a period of 2 ML Mn thickness, indicative of direct exchange coupling through the antiferromagnetic Mn layer. In addition, a long-period interlayer coupling of the two FM layers with antiparallel coupling maxima at Mn thicknesses of 2.5, 8.2, and 13.7 ML is observed and attributed to indirect exchange coupling of the Rudermann-Kittel-Kasuya-Yosida type.
机译:在Cu(001)上生长了具有楔形Mn层的外延Co/Mn/Co三层膜,并通过磁光克尔效应测量进行了研究。底部的 Co 薄膜和 Mn 薄膜表现出逐层生长模式,它允许通过调整薄膜的厚度来实现其最顶部原子层的一定填充,从而在原子尺度上修改两种界面粗糙度。在室温下,Mn层的反铁磁有序开始,在4.1(4.8)和3.4(4.0)原子单层(ML)的厚度下,Mn/Co双层和Co/Mn/Co三层的底部Co膜的最顶层原子层分别被填充(半填充)。对于底部Co膜最上面原子层半填充的三层,发现了只有一个步骤的磁化环,而在底部Co膜中原子层为整数个原子层的三层中观察到了具有两个独立步骤的环。顶部Co膜的矫顽力显示,随着Mn厚度超过10 ML的函数,具有1 ML周期的振荡,这被解释为原子尺度控制界面粗糙度对反铁磁Mn和顶部铁磁(FM)Co层之间界面交换耦合的影响。从小环路测量中推断出,顶层和底层 Co 层之间通过 Mn 层的磁层间耦合强度对于底部 Co 层中整数个原子层的强度表现出 2 ML Mn 厚度的振荡,表明通过反铁磁 Mn 层的直接交换耦合。此外,在Mn厚度为2.5、8.2和13.7 ML时,观察到两个FM层的长周期层间耦合,反平行耦合最大值,并归因于Rudermann-Kittel-Kasuya-Yosida类型的间接交换耦合。

著录项

  • 来源
    《Journal of Applied Physics》 |2014年第23期|233915-1-233915-7|共7页
  • 作者单位

    Institut fur Experimentalphysik, Freie Universitat Berlin, Arnimallee 14, 14195 Berlin, Germany;

    Chung Yuan Christian University, 200 Chung Pei Road, Chung Li City, 32023, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
  • 关键词

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