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Electronic transport and conduction mechanism transition in La_(1/3)Sr_(2/3)FeO_3 thin films

机译:La_(1/3)Sr_(2/3)FeO_3薄膜中的电子传输和传导机制转变

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摘要

We report on the electronic transport properties of epitaxial La_(1/3)Sr_(2/3)FeO_3 films using temperature dependent resistivity, Hall effect, and magnetoresistance measurements. We show that the electronic phase transition, which occurs near 190 K, results in a change in conduction mechanism from nonadiabatic polaron transport at high temperatures to resistivity behavior following a power law temperature dependence at low temperatures. The phase transition is also accompanied by an abrupt increase in apparent mobility and Hall coefficient below the critical temperature (T~*). We argue that the exotic low temperature transport properties are a consequence of the unusually long-range periodicity of the antiferromagnetic ordering, which also couples to the electronic transport in the form of a negative magnetoresistance below T~* and a sign reversal of the Hall coefficient at T~*. By comparing films of differing thicknesses, stoichiometry, and strain states, we demonstrate that the observed conduction behavior is a robust feature of La_(1/3)Sr_(2/3)FeO_3.
机译:我们使用温度相关的电阻率、霍尔效应和磁阻测量报告了外延La_(1/3)Sr_(2/3)FeO_3薄膜的电子输运特性。我们表明,发生在190 K附近的电子相变导致传导机制从高温下的非绝热极化子传输转变为低温下幂律温度依赖性的电阻率行为。相变还伴随着表观迁移率和霍尔系数在临界温度(T~*)以下的突然增加。我们认为,奇异的低温输运特性是反铁磁有序的异常长程周期性的结果,它也以低于T~*的负磁阻和T~*处霍尔系数的符号反转的形式耦合到电子输运。通过比较不同厚度、化学计量和应变状态的薄膜,我们证明了观察到的传导行为是 La_(1/3)Sr_(2/3)FeO_3 的稳健特征。

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