Nanoscale characterization of hydrogenated and oxidized B-doped homoepitaxial diamond by conductive atomic force microscopy

摘要

A comparison of topographical and electrical properties of hydrogenated and oxidized high-quality B-doped homoepitaxial films was carried out by conductive atomic force microscopy. The topography images of both hydrogenated and oxidized films showed nanoscale flatness and uniformity. The hydrogenated film showed ohmic property indicating the existence of a high-conductivity layer on the surface. A reproducible periodical stripe pattern in the conductivity distribution was also observed indicating the imperfection of H-termination on the step edges. On the other hand, the oxidized surface showed Schottky I-V characteristics and a uniform conductivity distribution without structural dependence, although the surface morphology was modified after the current measurements.