Comment on 'Schottky diodes with a δ-doped near-surface layer' J. Appl. Phys. 90, 6205 (2001)

摘要

The influence of planar δ-doping on the effective parameters of Schottky diodes was modeled by J. Osvald J. Appl. Phys. 90, 6205 (2001). In this Comment we emphasize that the proposed analysis based on the drift-diffusion model does not seem to be fully correct for the system in question. Neglect of the tunneling effects in Schottky diode with isotype δ-layer inserted near the metal-semiconductor interface leads to wrong speculations about the effective barrier height and ideality factor.